N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
FEATURES
● FAST POWER MOS TRANSISTOR
● TYPICAL RDS(on) = 0.075 Ω
● HIGH CURRENT POWER MODULE
● AVALANCHERUGGED TECHNOLOGY
● VERY LARGE SOA - LARGE PEAK POWER CAPABILITY
● EASY TO MOUNT
● SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS
● EXTREMELY LOW Rth (Junction to case)
● VERY LOW INTERNAL PARASITIC INDUCTANCE
● ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
● SMPS & UPS
● MOTOR CONTROL
● WELDING EQUIPMENT
● OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
E53NA50,STE53NA50