N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP
STripFET POWER MOSFET
FEATURES
● TYPICAL RDS(on) = 4.5 mΩ
● 100% AVALANCHE TESTED
● LOW INTRINSIC CAPACITANCE
● GATE CHARGE MINIMIZED
● REDUCED VOLTAGE SPREAD
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
● SMPS & UPS
● MOTOR CONTROL
● WELDING EQUIPMENT
● OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
STE180NE10