Danfoss IGBT Power Module New and Original

• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low temperature dependence
• High short circuit capability
• Latch-up free
• Fast&soft inverse CAL diodes
• Isolated copper baseplate using DCB Direct Copper Bonding Technology
DP10F1200TO101909,DP15F1200TO101910,DP300D1200T102002,DP35D1200T102500,DP1200B1200T104008,DP300B1200T102817,DP50H1200T101710